Synthesis of Fluorinated Materials for 193-nm Immersion Lithography and 157-nm Lithography
نویسندگان
چکیده
منابع مشابه
Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography
Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography The aqueous base development step is one of the most critical processes in modern lithographic imaging technology. Sinusoidal modulation of the exposing light intensity must be converted to a step function in the resist film during the development process. Thus, in designing high-performance resi...
متن کاملTiSi-nitride attenuating phase-shift photomask for 193 nm lithography
G. A. M. Reynolds, R. H. French, P. F. Carcia, C. C. Torardi, G. Hughes, D. J. Jones, M. F. Lemon, M. Reilly, L. Wilson, C. R. Miao “TiSi-nitride attenuating phase-shift photomask for 193 nm lithography”, 18th Annual BACUS Symposium on Photomask Technology and Management, SPIE Vol. 3546, Edited by B. J. Grenon, F. E. Abboud, 514-23, (1998). TiSi-nitride attenuating phase-shift photomask for 193...
متن کاملSingle Layer Fluoropolymer Resists for 157 nm Lithography
We have developed a family of 157 nm resists that utilize fluorinated terpolymer resins composed of 1) tetrafluoroethylene (TFE), 2) a norbornene fluoroalcohol (NBFOH), and 3) t-butyl acrylate (t-BA). TFE incorporation reduces optical absorbance at 157 nm, while the presence of a norbornene functionalized with hexafluoroisopropanol groups contributes to aqueous base (developer) solubility and e...
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Bottom anti-reflective coatings (BARCs) are essential for achieving the 65-nm node resolution target by minimizing the substrate reflectivity to less than 1% and by planarizing substrates. We believe that the developments in 157-nm BARC products are on track to make them available for timely application in 157-nm lithography. We have made some significant improvements in resist compatibility an...
متن کاملAlternatives to Chemical Amplification for 193 nm Lithography
Research has been conducted to develop alternatives to chemically amplified 193 nm photoresist materials that will be able to achieve the requirements associated with sub-32 nm device technology. New as well as older photoresist design concepts for non-chemically amplified 193 nm photoresists that have the potential to enable improvements in line edge roughness while maintaining adequate sensit...
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2005
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.18.631